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| IL215AT/216AT/217AT PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER FEATURES Package Dimensions in Inches (mm) * High Current Transfer Ratio, IF=1 mA IL215AT, 20% Minimum IL216AT, 50% Minimum IL217AT, 100% Minimum Isolation Voltage, 2500 VACRMS Electrical Specifications Similar to Standard 6 Pin Coupler Industry Standard SOIC-8 Surface Mountable Package Standard Lead Spacing, .05" Available in Tape and Reel (suffix T) (Conforms to EIA Standard RS481A) Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering Underwriters Lab File #E52744 (Code Letter P) .120.005 (3.05.13) .240 (6.10) Pin One ID .192.005 (4.88.13) .004 (.10) .008 (.20) .050 (1.27) typ. .021 (.53) Anode 1 .154.005 Cathode 2 C L (3.91.13) NC 3 NC 4 .016 (.41) .015.002 (.38.05) .008 (.20) 40 8 7 6 5 NC Base Collector Emitter * * * * * * * 7 .058.005 (1.49.13) .125.005 (3.18.13) Lead Coplanarity .0015 (.04) max. 5 max. R.010 (.25) max. .020.004 (.15.10) 2 plcs. TOLERANCE: .005 (unless otherwise noted) DESCRIPTION The IL215AT/216AT/217AT is an optically coupled pair with a Gallium Arsenide infrared LED and a silicon NPN phototransistor. Signal information, including a DC level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and output. The IL215AT/ 216AT/217AT comes in a standard SOIC-8 small outline package for surface mounting which makes it ideally suited for high density applications with limited space. In addition to eliminating throughholes requirements, this package conforms to standards for surface mounted devices. The high CTR at low input current is designed for low power consumption requirements such as CMOS microprocessor interfaces. Maximum Ratings Emitter Peak Reverse Voltage ............................................ 6.0 V Continuous Forward Current ............................... 60 mA Power Dissipation at 25C .................................. 90 mW Derate Linearly from 25C ............................ 1.2 mW/C Detector Collector-Emitter Breakdown Voltage ..................... 30 V Emitter-Collector Breakdown Voltage ....................... 7 V Collector-Base Breakdown Voltage ........................ 70 V Power Dissipation ............................................. 150 mW Derate Linearly from 25C ............................ 2.0 mW/C Package Total Package Dissipation at 25C Ambient (LED + Detector) ........................................... 280 mW Derate Linearly from 25C ............................ 3.3 mW/C Storage Temperature .......................... -55C to +150C Operating Temperature ...................... -55C to +100C Soldering Time at 260C .................................... 10 sec. Characteristics (TA=25C) Symbol Min. Typ. Emitter Forward Voltage Reverse Current Capacitance Detector Breakdown Voltage Collector-Emitter Emitter-Collector Collector-Emitter Dark Current Collector-Emitter Capacitance Package DC Current Transfer IL215AT IL216AT IL217AT Collector-Emitter Saturation Voltage Isolation Test Voltage Capacitance, Input to Output Resistance, Input to Output Switching Time VF IR CO 1.0 0.1 25 Max. Unit 1.5 100 V A pF Condition IF=1 mA VR=6.0 V V R=0 IC=10 A IE=10 A VCE=10 V, IF =0 V CE=0 IF=1 mA VCE=5 V BVCEO BVECO I CEOdark CCE CTRDC 30 7 5 10 50 V V nA pF % 20 50 100 VCE sat V IO C IO R IO tON, tOFF 2500 50 80 130 0.4 VACRMS 0.5 100 3.0 pF G s IC=0.1 mA, IF=1 mA IC=2 mA, RE=100 , VCE=10 V Specifications subject to change. Semiconductor Group 4-7 10.95 Figure 1. Forward voltage versus forward current Figure 2. Normalized non-saturated and saturated CTRce versus LED current NCTRce - Normalized CTRce 1.4 VF - Forward Voltage - V 1.5 1.3 1.2 1.1 1.0 0.9 0.8 0.7 .1 Ta = -55C Ta = 25C 1.0 Normalized to: Vce = 10 V IF = 10 mA Ta = 25C Vce = 5 V Ta = 85C 0.5 Vce = 0.4 V 0.0 .1 1 10 IF - LED Current - mA 100 1 10 IF - Forward Current - mA 100 Figure 3. Collector-emitter current versus LED current Figure 4. Normalized collector-base photocurrent versus LED current NIcb - Normalized Icb 150 Ta = 25C Vce = 10 V 100 Ice - Collector-emitter Current - mA 100 Normalized to: Vcb = 9.3 V IF = 1 mA 10 Ta = 25 C 1 .1 .1 1 10 IF - LED Current - mA 100 50 Vce = 0.4 V 0 .1 1 10 IF - LED Current - mA 100 Icb - Collector-base Current - A Figure 5. Collector-base photocurrent versus LED current 1000 100 10 1 .1 .1 1 10 100 Ta = 25C Vcb = 9.3 V Iceo - Collector-Emitter - nA Figure 6. Collector-emitter leakage current versus temperature 5 10 4 10 3 10 10 2 10 1 Vce = 10V TYPICAL 10 0 10 -1 10 -2 -20 IF - LED Current - mA Figure 7. Normalized saturated HFE versus base current and temperature 0 20 40 60 80 100 Ta - Ambient Temperature - C 70C 50C 25C NHFE(sat) - Normalized Saturated HFE 1.5 1.0 Normalized to: Ib = 20A Vce = 10 V Ta = 25 C NCTRce - Normalized CTRce 2.0 Figure 8. Normalized non-saturated and saturated CTRce versus LED current 2.0 Normalized to: Vce = 5 V Ta = 25 C Vce = 5 V 1.5 IF = 1 mA 1.0 0.5 Vce = .4 V 0.0 .1 1 10 IF - LED Current - mA 100 Vce = 0.4 V 0.5 0.0 1 10 100 Ib - Base Current - A 1000 Semiconductor Group 4-8 Figure 9. Normalized non-saturated and saturated collector-emitter current versus LED current Figure 10. Normalized collector-base photocurrent versus LED current 100 NIcb - Normalized Icb 100 NIce - Normalized Ice 10 1 .1 .01 .1 Normalized to: Ta = 25C Vce = 5 V IF = 1 mA Vce = 5 V Vce = .4 V 10 1 .1 .01 .01 Normalized to: Ta = 25C Vce = 5 V IF = 1 mA 1 10 IF - LED Current - mA 100 .1 1 10 100 IF - LED Current - mA 1000 Figure 11. Collector-base photocurrent versus LED current Ta = 25C Vcb = 9.3 V Figure 12. High to low propagation delay versus LED current and load resistor tpHL - High-Low Propagation Delay - s 1000 100 10 1 .1 .01 20 15 10 5 0 0 10K 4.7K 2K Icb - Collector-base photocurrent -a Ta = 25C Vcc = 5 V Vth = 1.5 V .1 1 10 100 1000 IF - LED Current - mA 5 10 15 IF - LED Current - mA 20 Figure 13. Low to high propagation delay versus LED current and load resistor Figure 14. Normalized non-saturated HFE versus base current and temperature 1.2 80 tpLH - Low-High Propagation Delay - s NHFE - Normalized HFE 10K 60 40 20 0 0 5 10 15 IF - LED Current - mA 20 70C 50C 1.0 0.8 0.6 0.4 1 25C -20C Normalized to: Ib = 20A Vce = 10 V Ta = 25C 4.7K 2K Ta = 25C, Vcc = 5 V, Vth = 1.5 V 10 100 Ib - Base Current - A 1000 Figure 15. Typical switching characteristics versus base resistance (saturated operation) 100 Input: IF =10mA 50 Pulse width=100 mS Duty cycle=50% Figure 16. Typical switching times versus load resistance 1000 Input: 500 IF=10 mA Pulse width=100 mS Duty cycle=50% 100 50 10 5 1 Switching time (S) Switching time (s) T OF F TO FF 10 5 TON TON 1.0 10K 50K 100K 500K 1M 0.1 0.5 1 5 10 50 100 Base-emitter resistance, RBE () Semiconductor Group 4-9 Load resistance RL (K) |
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